technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier qualified per mil-prf-19500/297 ? glass passivated die ? glass to metal seal construction ? 500 amps surge rating ? vrrm to 1000 volts t4-lds-0138 rev. 1 (091729) page 1 of 3 devices levels 1n1184 1n1190 1n1184r 1n1190r jan 1n1186 1n3766 1n1186r 1N3766R jantx 1n1188 1n3768 1n1188r 1n3768r jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit peak reverse voltage 1n1184 1n1186 1n1188 1n1190 1n3766 1n3768 1n1184r 1n1186r 1n1188r 1n1190r 1N3766R 1n3768r v r 100 200 400 600 800 1000 v average forward current, t c = 150 i f 35 a peak surge forward current @ t p = 8.3ms, half sinewave, t c = 150c i fsm 500 a thermal resistance, junction to case r jc 0.8 c/w operating case temperature range t j -65c to 175c c storage temperature range t stg -65c to 175c c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit forward voltage i fm = 110a, t c = 25c* v fm 1.4 v forward voltage i fm = 500a, t c = 150c* v fm 2.3 v reverse current v rm = 100, t j = 25c v rm = 200, t j = 25c v rm = 400, t j = 25c v rm = 600, t j = 25c v rm = 800, t j = 25c v rm = 1000, t j = 25c 1n1184 1n1186 1n1188 1n1190 1n3766 1n3768 1n1184r 1n1186r 1n1188r 1n1190r 1N3766R 1n3768r i rm 10 a reverse current v rm = 100, t j = 150c v rm = 200, t j = 150c v rm = 400, t j = 150c v rm = 600, t j = 150c v rm = 800, t j = 150c v rm = 1000, t j = 150c 1n1184 1n1186 1n1188 1n1190 1n3766 1n3768 1n1184r 1n1186r 1n1188r 1n1190r 1N3766R 1n3768r i rm 1 ma * pulse test: pulse width 300 sec, duty cycle 2% note: do-203ab (do-5)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0138 rev. 1 (091729) page 2 of 3 graphs figure 3 forward current derating figure 1 typical forward characteristics figure 4 transient thermal impedance figure 2 typical reverse characteristics
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http://www.microsemi.com high reliability silicon power rectifier t4-lds-0138 rev. 1 (091729) page 3 of 3 package dimensions ltr dimensions inches millimeters min max min max oah 1.000 25.40 ch .450 11.43 ht .115 .200 2.93 5.08 sl .422 .453 10.72 11.50 ht1 .060 1.53 b .250 .375 6.35 9.52 cd .667 16.94 hf .667 .687 16.95 17.44 j .156 3.97 t .140 .175 3.56 04.44 c .080 2.03 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 units must not be damaged by torque of 30 inch-pounds applied to .250-28 unf-28 nut assembled on thread. 4 diameter of unthreaded portion .249 inch (6.32 mm) max and .220 inch (5.59 mm) min. 5 complete threads to extend to within 2.5 threads of seating plane. 6 angular orientation of this terminal is undefined. 7 max pitch diameter of plated threads shall be basic pitch diameter .2268 inch (5.76 mm) reference fedstd-h28. 8 a chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane. .600 inch (15.24 mm). 9 in accordance with asme y14.5m , diameters are equivalent to x symbology. m .030 0.77 physical dimensions, (all device types) do-5
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